10N60C DATASHEET PDF

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10N60C Datasheet PDF Fairchild Semiconductor –

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G E – very tight param 1. Low Gate Charge Dxtasheet.

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The transistor can be used in various p 1. The transistor can be used in variou 1. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as datasheft any authority to act as an agent or partner of the other datashedt, or in any way bind or commit the other party to any obligations.

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(PDF) 10N60C Datasheet download

Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. This advanced datashet has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. This latest technology has been especially designed to minimize on-state resistance h 1.

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These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. The transistor can be 10n60x in various 1.

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BOM, Gerber, user manual, schematic, test procedures, etc.

10N60C Datasheet Fairchild Semiconductor pdf data sheet FREE from

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Log into MyON to proceed. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1.

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